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| NTE363 Silicon NPN Transistor RF Power Amp, PO = 4W Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: D Designed for UHF Military and Commercial Equipment D 4W (Min) with Greater than 8dB Gain D Withstands Infinite VSWR Under Operating Conditions D Low Inductance Stripline Package D Emitter Stabilized Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Total Device Dissipation (TC = +25C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6C/W Electrical Characteristics: Parameter Collector-Emiter Breakdown Voltage Symbol Test Conditions Min 16 36 4 - 20 Typ - - - - - Max - - - 1.0 - Unit V V V mA V(BR)CEO IC = 100mA, IB = 0, Note 1 V(BR)CES IC = 100mA, IBE = 0, Note 1 Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain V(BR)EBO IE = 2mA, IC = 0 ICBO hFE VCB = 5V, IE = 0 VCE = 5V, IC = 200mA Note 1. Pulsed throught 25MH inductor. Electrical Characteristics (Cont'd): Parameter RF Characteristics, Small-Signal Output Capacitance Input Capacitance RF Characteristics, Large-Signal Amplifier Power Out Amplifier Power Gain Input Impedance Output Impedance PO Pg Zin Zout 470MHz/12.5V 4 8 - - 2.0 + J.96 6.0 - J3.4 - - W dB Cob Cib VCB = 12.5V, IC = 0 VEB = 500mV, IC = 0 - - - 60 25 - pF pF Symbol Test Conditions Min Typ Max Unit B .225 (5.72) E E .530 (13.46) C .063 (1.62) .282 (7.17) Dia .123 (3.12) .005 (0.15) Seating Plane 8-32 NC-3A .630 (16.0) Wrench Flat .250 (6.35) Dia |
Price & Availability of NTE363
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